Enhanced optoelectronics performance of hybrid self power photodetectors GO: TiO2- AD / n-Si heterojunctions

Mohammed J. AlSultani, Physics Department, College of Science, University of Baghdad, Jadriya, Baghdad, Iraq.
Maysoon F. Alias, Physics Department, College of Science, University of Baghdad, Jadriya, Baghdad, Iraq.Follow

Abstract

A GO:TiO₂/n-Si heterostructure has been submerged in an anthocyanin dye solution that extracted from the red cabbage plant creates a high responsivity, self-powered UV, and visible photodetectors fabricated by the spray pyrolysis technique. The GO concentrations are varied, whereas TiO₂ is fixed. Thin films' structure, shape, and optical characteristics were examined using X-ray diffraction, field emission scanning electron microscopy, and UV-Vis spectrophotometers respectively. Island-like polycrystalline film powders with grain boundaries and granular shapes are created. Two direct energy gaps between 3.33-3.02 and 2.39-2.04 eV exist in all films. J-V characteristics were examined. The saturation current density (J_o), the ideality factor (n), the barrier height (φ_b), and the resistance (R_s) were estimated using the Cheung methodology and traditional methods. The GO concentration has massively lowered leakage current and the ideality factor. (C-V) properties were computed. As the GO concentration rises, (V_bi), (E_F), and φ_b values rise, whereas the effective carrier concentration (N_d) and Δφ_b values decrease. Capacitance rapidly decreased as reverse voltage rose owing to the broadening of the heterojunction depletion layer led to improve photodetection. The photodetector devices were evaluated at 380–620 nm. These devices showed steady current across numerous cycles and great repeatability and stability. Calculated merit statistics included responsivity (R_λ), specific detectivity (D*), external quantum efficiency (EQE), photosensitivity (ξ), and noise equivalent power (NEP). The greatest values for R_λ, EQE, D* and NEP were 0.96 A.W^-1 and 305.5%, 3.06 × 10¹¹ cm. Hz^1/2. W⁻¹ and 8.39 × 10^-13 W. Hz ^−1/2 at 4: 4 GO: TiO₂-AD/n-Si concentration. GO: TiO₂-AD/n-Si self-power photodetectors have excellent weak light detection, could be considered as an attractive candidates for optoelectronic devices such as hybrid or dye-sensitized solar cells and photodetectors.

Keywords: TiO₂: GO thin films, Anthocyanin dye, Structural properties, Morphological properties, Optical properties, Photodetector, Figure of merit of photodetector

Recommended Citation

AlSultani, Mohammed J. and Alias, Maysoon F. (2024) "Enhanced optoelectronics performance of hybrid self power photodetectors GO: TiO2- AD / n-Si heterojunctions," Karbala International Journal of Modern Science: Vol. 10 : Iss. 3 , Article 1.
Available at: https://doi.org/10.33640/2405-609X.3362